Browse NSN 5962-01-214-0933 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 5805171P26, 5805171T26, 5807811P48, ROM PROM FAMILY 013 listed under NSN 5962-01-214-0933 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration Inc, Dla Land And Maritime. If you’d like a quick quote for NSN 5962-01-214-0933, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-214-0933 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012140933 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration Inc , Dla Land And Maritime |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5805171P26 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| 5805171T26 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| 5807811P48 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 013 | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012140933
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | AGAV | END ITEM IDENTIFICATIONRECEIVING SETCOUNTERMEASURES ANSLR-16A |
| MEMORY | CBBL | FEATURES PROVIDEDPROGRAMMABLE AND BIPOLAR AND SCHOTTKY AND 3-STATE OUTPUT |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN6 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 80 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING739 0 MILLIWATTS |
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