Browse NSN 5962-01-262-9881 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 5962-8103509BRA, 5962-8103509BRB, 5962-8103509BRX, 81035, 8103509RA listed under NSN 5962-01-262-9881 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Dla Land And Maritime, National Semiconductor Corp, Mmi Amd. If you’d like a quick quote for NSN 5962-01-262-9881, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-262-9881 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012629881 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Mmi Amd , National Semiconductor Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5962-8103509BRA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8103509BRB | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8103509BRX | dla land and maritime | microcircuit memory | Avl | RFQ |
| 81035 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8103509RA | dla land and maritime | microcircuit memory | Avl | RFQ |
| DMPAL16L2J 883 | national semiconductor corp | microcircuit memory | Avl | RFQ |
| PAL16L2MJ 883 | mmi amd | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 074 | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012629881
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 2.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND BIPOLAR AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES NOMINAL OUTPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | PAL |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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