Browse NSN 5962-01-269-8324 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 15-1216657-60, 15 1217965 250, 5300-1J, 82S126, ROM PROM FAMILY 021 listed under NSN 5962-01-269-8324 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by General Dynamics Corp, Mmi Amd, Philips Semiconductors Ltd, Dla Land And Maritime. If you’d like a quick quote for NSN 5962-01-269-8324, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-269-8324 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012698324 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , General Dynamics Corp , Mmi Amd , Philips Semiconductors Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 15-1216657-60 | general dynamics corp | microcircuit memory | Avl | RFQ |
| 15 1217965 250 | general dynamics corp | microcircuit memory | Avl | RFQ |
| 5300-1J | mmi amd | microcircuit memory | Avl | RFQ |
| 82S126 | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 021 | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012698324
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND BIPOLAR |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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