Browse NSN 5962-01-424-3336 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 5962-89598, 5962-8959821MZA, 5962-8959821MZB, 5962-8959821MZX, CY7C1009L 20DMB listed under NSN 5962-01-424-3336 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Dla Land And Maritime, Cypress Semiconductor Inc, White Electronic Designs Corp, Austin Semiconductor Inc. If you’d like a quick quote for NSN 5962-01-424-3336, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-424-3336 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 014243336 |
| NCB Code: USA (01) |
| Manufacturers: Austin Semiconductor Inc , Cypress Semiconductor Inc , Dla Land And Maritime , White Electronic Designs Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 5962-89598 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8959821MZA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8959821MZB | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8959821MZX | dla land and maritime | microcircuit memory | Avl | RFQ |
| CY7C1009L 20DMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| EDI88130LPS20TB | white electronic designs corp | microcircuit memory | Avl | RFQ |
| MT5C1008C-20L883C | austin semiconductor inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962014243336
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.700 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.350 INCHES MINIMUM AND 0.405 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.232 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE AND LOW POWER AND BURN IN, MIL-STD-883, CLASS B |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS, 128K X 8 STATIC RANDOM ACCESS MEMORY (SRAM) LOW POWER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| CZEQ | TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS NOMINAL ACCESS |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | DUAL CE |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 PRINTED CIRCUIT |
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