Browse NSN 5961-00-189-3301 Listing of Transistor
It is our pleasure to inform you that part number 007 0145 00, 007 0145 00, 48P10961D001, 95-00452-002, MFE3002 listed under NSN 5961-00-189-3301 is now available and ready to ship from Fulfillment By ASAP. This part described as a Transistor manufactured by Freescale Semiconductor Inc, Drs Icas Llc, Motorola Ltd, Raytheon Company, Joint Electron Device Engineering. If you’d like a quick quote for NSN 5961-00-189-3301, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5961-00-189-3301 |
| Item Name: Transistor |
| Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware |
| NIIN: 001893301 |
| NCB Code: USA (00) |
| Manufacturers: Drs Icas Llc , Freescale Semiconductor Inc , Joint Electron Device Engineering , Motorola Ltd , On Semiconductor Corporation , Raytheon Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 007 0145 00 | freescale semiconductor inc | transistor | Avl | RFQ |
| 007 0145 00 | drs icas llc | transistor | Avl | RFQ |
| 48P10961D001 | motorola ltd | transistor | Avl | RFQ |
| 95-00452-002 | raytheon company | transistor | Avl | RFQ |
| MFE3002 | joint electron device engineering | transistor | Avl | RFQ |
| MFE3002 | freescale semiconductor inc | transistor | Avl | RFQ |
| MFE3002 | on semiconductor corporation | transistor | Avl | RFQ |
| MFE3002N | freescale semiconductor inc | transistor | Avl | RFQ |
Characteristics Data of NSN 5961001893301
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | METAL |
| ABHP | OVERALL LENGTH | 0.170 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.500 INCHES MINIMUM |
| ADAV | OVERALL DIAMETER | 0.209 INCHES MINIMUM AND 0.230 INCHES MAXIMUM |
| ALAS | INTERNAL CONFIGURATION | FIELD EFFECT |
| AXGY | MOUNTING METHOD | TERMINAL |
| AYQS | TERMINAL CIRCLE DIAMETER | 0.100 INCHES NOMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | III SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 15.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 30.0 MAXIMUM GATE TO SOURCE VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 30.00 MILLIAMPERES MAXIMUM DRAIN CURRENT |
| CTRD | POWER RATING PER CHARACTERISTIC | 300.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS JUNCTION |
| TTQY | TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
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