Browse NSN 5962-01-128-3905 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 3400 02, 351-5625-012, 351-8530-032, ER3400HR, ER3400HR listed under NSN 5962-01-128-3905 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Ncr Ltd, Rockwell Collins Inc, General Semiconductor Inc, Microchip Technology Inc. If you’d like a quick quote for NSN 5962-01-128-3905, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-128-3905 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011283905 |
| NCB Code: USA (01) |
| Manufacturers: General Semiconductor Inc , Microchip Technology Inc , Ncr Ltd , Rockwell Collins Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 3400 02 | ncr ltd | microcircuit memory | Avl | RFQ |
| 351-5625-012 | rockwell collins inc | microcircuit memory | Avl | RFQ |
| 351-8530-032 | rockwell collins inc | microcircuit memory | Avl | RFQ |
| ER3400HR | general semiconductor inc | microcircuit memory | Avl | RFQ |
| ER3400HR | microchip technology inc | microcircuit memory | Avl | RFQ |
| ER3400HR 95 | microchip technology inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011283905
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.065 INCHES MINIMUM AND 1.105 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.380 INCHES MINIMUM AND 0.393 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.125 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | DATA LINK 76301 |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND ELECTRICALLY ALTERABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 13499-351-8530 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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