Browse NSN 5962-01-309-3417 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 99142756, CY7C168-45DMB, CY7C168-45DMB, G382307-103, IDT6168SA45DB listed under NSN 5962-01-309-3417 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Thales Sa, Cypress Semiconductor Inc, 2 Mb Distribution, Raytheon Company, Integrated Device Technology Inc. If you’d like a quick quote for NSN 5962-01-309-3417, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-309-3417 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013093417 |
| NCB Code: USA (01) |
| Manufacturers: 2 Mb Distribution , Cypress Semiconductor Inc , Integrated Device Technology Inc , Raytheon Company , Thales Sa |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 99142756 | thales sa | microcircuit memory | Avl | RFQ |
| CY7C168-45DMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| CY7C168-45DMB | 2 mb distribution | microcircuit memory | Avl | RFQ |
| G382307-103 | raytheon company | microcircuit memory | Avl | RFQ |
| IDT6168SA45DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013093417
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.930 INCHES MINIMUM AND 0.970 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 385.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND W/ENABLE AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
| AGAV | END ITEM IDENTIFICATION | 4920-01-187-4068 TEST SYSTEM,AUT |
| CQZP | INPUT CIRCUIT PATTERN | 18 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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