1N4757
Semiconductor Device Diode
Description
Procurement notes for 1N4757.
Semiconductor Device Diode ASAP can support availability checks, alternate review, lead-time confirmation, and documentation requirements tied to the part number, NSN, CAGE code, or active bill of materials.
Catalog classifications
NSN Information for Part Number 1N4757 with NSN 5961-00-506-6344, 5961005066344
Characteristics Data of NSN 5961-00-506-6344, 5961005066344
| MRC | Criteria | Characteristic |
|---|---|---|
| ABBH | INCLOSURE MATERIAL | GLASS |
| ABHP | OVERALL LENGTH | 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM |
| ABJT | TERMINAL LENGTH | 0.800 INCHES MINIMUM AND 1.300 INCHES MAXIMUM |
| ADAV | OVERALL DIAMETER | 0.060 INCHES MINIMUM AND 0.085 INCHES MAXIMUM |
| AXGY | MOUNTING METHOD | TERMINAL |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED CASE |
| CTMZ | SEMICONDUCTOR MATERIAL | SILICON |
| CTQN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 51.0 MAXIMUM NOMINAL REGULATOR VOLTAGE |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 0.28 AMPERES FORWARD CURRENT, AVERAGE PASCAL |
| CTRD | POWER RATING PER CHARACTERISTIC | 1.5 WATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR PRESET |
| CTSG | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 175.0 DEG CELSIUS AMBIENT AIR |
| TEST | TEST DATA DOCUMENT | 81349-MIL-S-19500 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 2 UNINSULATED WIRE LEAD |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-S-19500/406 GOVERNMENT SPECIFICATION |
