Browse NSN 5961-00-751-3183 Listing of Transistor

It is our pleasure to inform you that part number 2N1259, 2N1259, 2N1259, 2N1259, 2N1259 listed under NSN 5961-00-751-3183 is now available and ready to ship from Fulfillment By ASAP. This part described as a Transistor manufactured by Electronic Industries Inc, Alpine Industries Inc, Gilbert Engineering Co Inc, Esco Llc, Raytheon Company. If you’d like a quick quote for NSN 5961-00-751-3183, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!


Alternative NSN: 5961-00-751-3183
Item Name: Transistor
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 007513183
NCB Code: USA (00)
Manufacturers: Alpine Industries Inc , Electronic Industries Inc , Esco Llc , Gilbert Engineering Co Inc , Raytheon Company
Part No Manufacturer Item Name QTY RFQ
2N1259 electronic industries inc transistor Avl RFQ
2N1259 alpine industries inc transistor Avl RFQ
2N1259 gilbert engineering co inc transistor Avl RFQ
2N1259 esco llc transistor Avl RFQ
2N1259 raytheon company transistor Avl RFQ
RELEASE3187 electronic industries inc transistor Avl RFQ

Characteristics Data of NSN 5961007513183

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABJTTERMINAL LENGTH1.500 INCHES MINIMUM
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
AXGYMOUNTING METHODTERMINAL
AYQSTERMINAL CIRCLE DIAMETER0.200 INCHES NOMINAL
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CTRDPOWER RATING PER CHARACTERISTIC275.0 MILLIWATTS SMALL-SIGNAL INPUT POWER, COMMON-COLLECTOR MINIMUM
TTQYTERMINAL TYPE AND QUANTITY3 UNINSULATED WIRE LEAD
ABHPOVERALL LENGTH0.260 INCHES MAXIMUM
ADAVOVERALL DIAMETER0.370 INCHES MAXIMUM
CTMZIII SEMICONDUCTOR MATERIALSILICON
CTQXCURRENT RATING PER CHARACTERISTIC100.00 MILLIAMPERES SOURCE CUTOFF CURRENT MAXIMUM AND 10.00 MILLIAMPERES SOURCE CUTOFF CURRENT BLANK
FEATSPECIAL FEATURESJUNCTION PATTERN ARRANGEMENT: PNP

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