Browse NSN 5961-00-799-9010 Listing of Transistor

It is our pleasure to inform you that part number 2N1530, 2N1530, 2N1530, 2N1530 listed under NSN 5961-00-799-9010 is now available and ready to ship from Fulfillment By ASAP. This part described as a Transistor manufactured by General Dynamics Corp, On Semiconductor Corporation, Motorola Ltd, Freescale Semiconductor Inc. If you’d like a quick quote for NSN 5961-00-799-9010, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!


Alternative NSN: 5961-00-799-9010
Item Name: Transistor
Federal Supply Class (FSC): 5961 Semiconductor Devices and Associated Hardware
NIIN: 007999010
NCB Code: USA (00)
Manufacturers: Freescale Semiconductor Inc , General Dynamics Corp , Motorola Ltd , On Semiconductor Corporation
Part No Manufacturer Item Name QTY RFQ
2N1530 general dynamics corp transistor Avl RFQ
2N1530 on semiconductor corporation transistor Avl RFQ
2N1530 motorola ltd transistor Avl RFQ
2N1530 freescale semiconductor inc transistor Avl RFQ

Characteristics Data of NSN 5961007999010

MRCCriteriaCharacteristic
ABBHINCLOSURE MATERIALMETAL
ABHPOVERALL LENGTH0.375 INCHES NOMINAL
ADAVOVERALL DIAMETER0.875 INCHES MAXIMUM
AKPVMOUNTING FACILITY QUANTITY2
ALBAELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASECOLLECTOR
ASCQINTERNAL JUNCTION CONFIGURATIONPNP
CBBLFEATURES PROVIDEDHERMETICALLY SEALED CASE
CTQNVOLTAGE RATING IN VOLTS PER CHARACTERISTIC60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND 45.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 30.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN
CTQXCURRENT RATING PER CHARACTERISTIC5.00 AMPERES SOURCE CUTOFF CURRENT MINIMUM AND 5.00 AMPERES SOURCE CUTOFF CURRENT MAXIMUM
CTSGMAXIMUM OPERATING TEMP PER MEASUREMENT POINT100.0 DEG CELSIUS JUNCTION
TTQYTERMINAL TYPE AND QUANTITY2 UNINSULATED WIRE LEAD AND 1 CASE
ALASINTERNAL CONFIGURATIONJUNCTION CONTACT
AXGYMOUNTING METHODUNTHREADED HOLE
CTMZIII SEMICONDUCTOR MATERIALGERMANIUM

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