Browse NSN 5962-00-271-1695 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 4005817-402, 5560 B SD121, 5560DB SD121, AM27S02DM, DH75168 listed under NSN 5962-00-271-1695 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Honeywell International Inc, Mmi Amd, Advanced Micro Devices Inc, Sri International, Intel Corporation. If you’d like a quick quote for NSN 5962-00-271-1695, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-00-271-1695 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 002711695 |
| NCB Code: USA (00) |
| Manufacturers: Advanced Micro Devices Inc , Honeywell International Inc , Intel Corporation , Mmi Amd , Sri International |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 4005817-402 | honeywell international inc | microcircuit memory | Avl | RFQ |
| 5560 B SD121 | mmi amd | microcircuit memory | Avl | RFQ |
| 5560DB SD121 | mmi amd | microcircuit memory | Avl | RFQ |
| AM27S02DM | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| DH75168 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| GEM28520BEA | sri international | microcircuit memory | Avl | RFQ |
| S129 | intel corporation | microcircuit memory | Avl | RFQ |
| SD121 5560 B | mmi amd | microcircuit memory | Avl | RFQ |
| SD121 5560DB | mmi amd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962002711695
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.825 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.240 INCHES MINIMUM AND 0.290 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND METAL |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 5 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 07187-4005817 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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