Browse NSN 5962-00-530-4663 Listing of Microcircuit Memory

It is our pleasure to inform you that part number 310131P9, 932299-501B, C4792P, C4792Q, CC530Q listed under NSN 5962-00-530-4663 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration Inc, Raytheon Company, Philips Semiconductors Ltd, Dla Land And Maritime, Raytheon Technical Services Company. If you’d like a quick quote for NSN 5962-00-530-4663, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!


Part No Manufacturer Item Name QTY RFQ
310131P9 bae systems information and electronic systems integration inc microcircuit memory Avl RFQ
932299-501B raytheon company microcircuit memory Avl RFQ
C4792P philips semiconductors ltd microcircuit memory Avl RFQ
C4792Q philips semiconductors ltd microcircuit memory Avl RFQ
CC530Q philips semiconductors ltd microcircuit memory Avl RFQ
DMS80015B dla land and maritime microcircuit memory Avl RFQ
RM8200N raytheon technical services company microcircuit memory Avl RFQ
RM8200N raytheon company microcircuit memory Avl RFQ
RX5893 raytheon company microcircuit memory Avl RFQ
RX6965 raytheon technical services company microcircuit memory Avl RFQ
RX6965 raytheon company microcircuit memory Avl RFQ
SL8200J1 lansdale semiconductor inc microcircuit memory Avl RFQ

Characteristics Data of NSN 5962005304663

MRCCriteriaCharacteristic
MEMORYADAQBODY LENGTH0 370 INCHES MINIMUM AND 0 395 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 245 INCHES MINIMUM AND 0 275 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 050 INCHES MINIMUM AND 0 080 INCHES MAXIMUM
MEMORYAEHXMAXIMUM POWER DISSIPATION RATING580 0 MILLIWATTS
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0200 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDMONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND POSITIVE OUTPUTS
MEMORYCQSJINCLOSURE MATERIALCERAMIC AND GLASS
MEMORYCQSZINCLOSURE CONFIGURATIONFLAT PACK
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERNDUAL 6 INPUT
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC40 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYCZZZMEMORY CAPACITYUNKNOWN
MEMORYFEATSPECIAL FEATURESFORMED LEADS
MEMORYPMLCPRECIOUS MATERIAL AND LOCATIONTERMINAL SURFACE GOLD
MEMORYPRMTPRECIOUS MATERIALGOLD
MEMORYTESTTEST DATA DOCUMENT94117-310131 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTING GE
MEMORYTTQYTERMINAL TYPE AND QUANTITY24 FLAT LEADS

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