Browse NSN 5962-01-073-8366 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 615755-901, A633-1, AM91L30BDM, AM91L30DDC, DMS 88061B listed under NSN 5962-01-073-8366 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Raytheon Company, L3 Communications Corp, Advanced Micro Devices Inc, Dla Land And Maritime. If you’d like a quick quote for NSN 5962-01-073-8366, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-073-8366 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010738366 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , L3 Communications Corp , Raytheon Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 615755-901 | raytheon company | microcircuit memory | Avl | RFQ |
| A633-1 | l3 communications corp | microcircuit memory | Avl | RFQ |
| AM91L30BDM | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM91L30DDC | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| DMS 88061B | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010738366
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.060 INCHES MINIMUM AND 1.110 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.080 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.25 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND LOW POWER AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 19 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 22 PRINTED CIRCUIT |
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