Browse NSN 5962-01-078-7029 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 113-0035-003, 202798-006, 293510, 477-1408-002, 540723 listed under NSN 5962-01-078-7029 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Thermo Electron Corporation, Bae Systems Information And Electronic Systems Integration I, Eaton Corporation, Boeing Company The, Intersil Inc. If you’d like a quick quote for NSN 5962-01-078-7029, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-078-7029 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010787029 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Information And Electronic Systems Integration I , Bae Systems Information And Electronic Systems Integration Inc , Boeing Company The , Eaton Corporation , Hamilton Sundstrand Corporation , Harris Corporation , Intersil Inc , Mmi Amd , Philips Semiconductors Ltd , Raytheon Company , Rockwell Collins Inc , Thermo Electron Corporation |
Characteristics Data of NSN 5962010787029
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 739.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | +55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| FEAT | SPECIAL FEATURES | STATIC ELECTRICITY SENSTIVE |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/203 GOVERNMENT SPECIFICATION |
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