Browse NSN 5962-01-093-6160 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 000-8003-983, 3636B-1, 477-1690-001, 5E8971 344-0014, 82S191 listed under NSN 5962-01-093-6160 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Boeing Company The, Intel Corporation, Hamilton Sundstrand Corporation, Philips Semiconductors Ltd, Thales Sa. If you’d like a quick quote for NSN 5962-01-093-6160, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-093-6160 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010936160 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Boeing Company The , Dla Land And Maritime , Fairchild Semiconductor Corp , Hamilton Sundstrand Corporation , Intel Corporation , National Semiconductor Corp , Philips Semiconductors Ltd , Raytheon Company , Thales Sa |
Characteristics Data of NSN 5962010936160
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.02 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND SCHOTTKY AND W/BUFFERED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTI |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| ZZZK | SPECIFICATION/STANDARD DATA | 81349-MIL-M-38510/21 GOVERNMENT SPECIFICATION |
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