Browse NSN 5962-01-098-6079 Listing of Microcircuit Memory

It is our pleasure to inform you that part number 5300, 82S126, HM-7610, IM5603AM listed under NSN 5962-01-098-6079 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Mmi Amd, Philips Semiconductors Ltd, Intersil Inc. If you’d like a quick quote for NSN 5962-01-098-6079, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!


Alternative NSN: 5962-01-098-6079
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 010986079
NCB Code: USA (01)
Manufacturers: Intersil Inc , Mmi Amd , Philips Semiconductors Ltd
Part No Manufacturer Item Name QTY RFQ
5300 mmi amd microcircuit memory Avl RFQ
82S126 philips semiconductors ltd microcircuit memory Avl RFQ
HM-7610 intersil inc microcircuit memory Avl RFQ
IM5603AM intersil inc microcircuit memory Avl RFQ

Characteristics Data of NSN 5962010986079

MRCCriteriaCharacteristic
MEMORYCQWXOUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC
MEMORYCQZPINPUT CIRCUIT PATTERN10 INPUT
MEMORYCRHLBIT QUANTITY1024
MEMORYCSWJWORD QUANTITY256
MEMORYCWSGTERMINAL SURFACE TREATMENTSOLDER
MEMORYCZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE
MEMORYCZEQTIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT
MEMORYCZERMEMORY DEVICE TYPEROM
MEMORYTESTTEST DATA DOCUMENT03640-6091416 DRAWING THIS IS THE BASIC GOVERNING DRAWING SUCH AS A CONTRACTOR DRAWING ORIGINAL EQUIPMENT MANUFACTURER DRAWING ETC EXCLUDES ANY SPECIFICATION STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAW
MEMORYTTQYTERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT
MEMORYADAQBODY LENGTH0 890 INCHES MAXIMUM
MEMORYADATBODY WIDTH0 320 INCHES MAXIMUM
MEMORYADAUBODY HEIGHT0 125 INCHES MAXIMUM
MEMORYAFGAOPERATING TEMP RANGE-55 0125 0 DEG CELSIUS
MEMORYAFJQSTORAGE TEMP RANGE-65 0150 0 DEG CELSIUS
MEMORYCBBLFEATURES PROVIDEDMONOLITHIC AND PROGRAMMABLE AND BURN IN
MEMORYCQSJINCLOSURE MATERIALCERAMIC
MEMORYCQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE

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