Browse NSN 5962-01-135-5163 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 167900-001, 808823-4, 896336-1, MD2114 B, MD2114A B listed under NSN 5962-01-135-5163 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Harris Corporation, Raytheon Company, Intel Corporation, Rochester Electronics Llc. If you’d like a quick quote for NSN 5962-01-135-5163, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-135-5163 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011355163 |
| NCB Code: USA (01) |
| Manufacturers: Harris Corporation , Intel Corporation , Raytheon Company , Rochester Electronics Llc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 167900-001 | harris corporation | microcircuit memory | Avl | RFQ |
| 808823-4 | raytheon company | microcircuit memory | Avl | RFQ |
| 896336-1 | raytheon company | microcircuit memory | Avl | RFQ |
| MD2114 B | intel corporation | microcircuit memory | Avl | RFQ |
| MD2114A B | intel corporation | microcircuit memory | Avl | RFQ |
| MD2114AL-3 B | rochester electronics llc | microcircuit memory | Avl | RFQ |
| MD2114AL-3 B | intel corporation | microcircuit memory | Avl | RFQ |
| PA60172-1 | raytheon company | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011355163
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.900 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.260 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | BIT VERIFICAT E/I FSCM 82577 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH PERFORMANCE AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 150.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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