Browse NSN 5962-01-167-3237 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 4172499P001, 4172499P1, 4174252P1, 6301 1J, 93427DC listed under NSN 5962-01-167-3237 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration Inc, Mmi Amd, Fairchild Semiconductor Corp. If you’d like a quick quote for NSN 5962-01-167-3237, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
Alternative NSN: 5962-01-167-3237 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 011673237 |
NCB Code: USA (01) |
Manufacturers: Bae Systems Information And Electronic Systems Integration Inc , Fairchild Semiconductor Corp , Mmi Amd |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
4172499P001 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
4172499P1 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
4174252P1 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
6301 1J | mmi amd | microcircuit memory | Avl | RFQ |
93427DC | fairchild semiconductor corp | microcircuit memory | Avl | RFQ |
Z2499A.V01 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011673237
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH0 755 INCHES MINIMUM AND 0 785 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 265 INCHES MINIMUM AND 0 291 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 150 INCHES MINIMUM |
MEMORY | AFGA | OPERATING TEMP RANGE0 075 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN10 INPUT |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZEQ | TIME RATING PER CHACTERISTIC45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 45 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
MEMORY | CZER | MEMORY DEVICE TYPEROM |
MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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