Browse NSN 5962-01-186-5315 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 19110, 932750-1B, 932883-514, B2052-514, B2052-514 listed under NSN 5962-01-186-5315 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Mmi Amd, Raytheon Company, Intersil Inc, Intersil Communications Inc, Advanced Micro Devices Inc. If you’d like a quick quote for NSN 5962-01-186-5315, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-186-5315 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011865315 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Fairchild Semiconductor Corp , Intersil Communications Inc , Intersil Inc , Mmi Amd , Raytheon Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 19110 | mmi amd | microcircuit memory | Avl | RFQ |
| 932750-1B | raytheon company | microcircuit memory | Avl | RFQ |
| 932883-514 | raytheon company | microcircuit memory | Avl | RFQ |
| B2052-514 | intersil inc | microcircuit memory | Avl | RFQ |
| B2052-514 | intersil communications inc | microcircuit memory | Avl | RFQ |
| DH75703-514 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| HR10976 | fairchild semiconductor corp | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011865315
| MRC | Criteria | Characteristic |
|---|---|---|
| ABHP | OVERALL LENGTH | 0.930 INCHES MINIMUM AND 1.010 INCHES MAXIMUM |
| ADAQ | BODY LENGTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.050 INCHES NOMINAL |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.085 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | BIPOLAR AND BURN IN AND ELECTROSTATIC SENSITIVE AND GATED OUTPUT AND PARALLEL OPERATION AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/ENABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC OR METAL |
| CQSZ | INCLOSURE CONFIGURATION | FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 12 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | ROM |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 FLAT LEADS |
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