Browse NSN 5962-01-186-5707 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 144A9552P6, 299A9982P460, 7138DPAH, CC4497, ROM PROM FAMILY 051 listed under NSN 5962-01-186-5707 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Bae Systems Controls Inc, Advanced Micro Devices Inc, Philips Semiconductors Ltd, Dla Land And Maritime, Intel Corporation. If you’d like a quick quote for NSN 5962-01-186-5707, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-186-5707 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011865707 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Bae Systems Controls Inc , Dla Land And Maritime , Intel Corporation , Philips Semiconductors Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 144A9552P6 | bae systems controls inc | microcircuit memory | Avl | RFQ |
| 299A9982P460 | bae systems controls inc | microcircuit memory | Avl | RFQ |
| 7138DPAH | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| CC4497 | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 051 | dla land and maritime | microcircuit memory | Avl | RFQ |
| S8337 | intel corporation | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011865707
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 290 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 500 INCHES MINIMUM AND 0 610 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 210 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND BIPOLAR AND MONOLITHIC AND PROGRAMMABLE AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-3 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC5 5 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | CZZZ | MEMORY CAPACITYUNKNOWN |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY24 PRINTED CIRCUIT |
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