Browse NSN 5962-01-191-3471 Listing of Microcircuit Memory
It is our pleasure to inform you that part number A08361, AM27S191 BJA, AM27S191 BJA, AM27S191DMB, FV 2147270 listed under NSN 5962-01-191-3471 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Mbda Incorporated, Advanced Micro Devices Inc, Dm Systems Incorporated, Qinetiq Ltd, Philips Semiconductors Ltd. If you’d like a quick quote for NSN 5962-01-191-3471, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-191-3471 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011913471 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dm Systems Incorporated , Mbda Incorporated , Philips Semiconductors Ltd , Qinetiq Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| A08361 | mbda incorporated | microcircuit memory | Avl | RFQ |
| AM27S191 BJA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM27S191 BJA | dm systems incorporated | microcircuit memory | Avl | RFQ |
| AM27S191DMB | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| FV 2147270 | qinetiq ltd | microcircuit memory | Avl | RFQ |
| S82S191I 883B | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011913471
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.290 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND PROGRAMMABLE AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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