Browse NSN 5962-01-197-8703 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 312234-003, 5962PL0930421, AM2148 45 BVA, AM2148-45DM-B, AM2148 55 BVA listed under NSN 5962-01-197-8703 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration I, Inspektorat Wsparcia Sil Zbrojnych, Advanced Micro Devices Inc, Cypress Semiconductor Inc, Drs Sustainment Systems Inc. If you’d like a quick quote for NSN 5962-01-197-8703, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-197-8703 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011978703 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Bae Systems Information And Electronic Systems Integration I , Cypress Semiconductor Inc , Drs Sustainment Systems Inc , Inspektorat Wsparcia Sil Zbrojnych , Raytheon Company , Synertek |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 312234-003 | bae systems information and electronic systems integration i | microcircuit memory | Avl | RFQ |
| 5962PL0930421 | inspektorat wsparcia sil zbrojnych | microcircuit memory | Avl | RFQ |
| AM2148 45 BVA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM2148-45DM-B | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM2148 55 BVA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| CY2148-55DBM | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| CY2148-55DMB | cypress semiconductor inc | microcircuit memory | Avl | RFQ |
| ES5455-02 | drs sustainment systems inc | microcircuit memory | Avl | RFQ |
| G111397-1 | raytheon company | microcircuit memory | Avl | RFQ |
| G303488-103 | raytheon company | microcircuit memory | Avl | RFQ |
| SYMC2148H 2 | synertek | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011978703
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 960 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 185 INCHES NOMINAL |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1200 0 MILLIWATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND MONOLITHIC AND HERMETICALLY SEALED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC AND GLASS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN16 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-6 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-3 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | FEAT | SPECIAL FEATURESBIT QUANTITY 4096 WORD QUANTITY 1024 |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY18 PRINTED CIRCUIT |
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