Browse NSN 5962-01-228-0135 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 72 00906 107, 760010 001, 760010-001, 999 4 43076 206, AM8155DM-B listed under NSN 5962-01-228-0135 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Raytheon Company, Datametrics Corporation, Rugged Information Technology, Selex Es Limited, Advanced Micro Devices Inc. If you’d like a quick quote for NSN 5962-01-228-0135, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
Alternative NSN: 5962-01-228-0135 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012280135 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc , Datametrics Corporation , Intel Corporation , Raytheon Company , Raytheon Systems Ltd , Rugged Information Technology , Selex Es Limited |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
72 00906 107 | raytheon company | microcircuit memory | Avl | RFQ |
760010 001 | datametrics corporation | microcircuit memory | Avl | RFQ |
760010-001 | rugged information technology | microcircuit memory | Avl | RFQ |
999 4 43076 206 | selex es limited | microcircuit memory | Avl | RFQ |
AM8155DM-B | advanced micro devices inc | microcircuit memory | Avl | RFQ |
MD102D20100S | raytheon systems ltd | microcircuit memory | Avl | RFQ |
MD8155 B | intel corporation | microcircuit memory | Avl | RFQ |
MD8155H B | intel corporation | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012280135
MRC | Criteria | Characteristic |
---|---|---|
MEMORY | ADAQ | BODY LENGTH2 030 INCHES MINIMUM AND 2 080 INCHES MAXIMUM |
MEMORY | ADAT | BODY WIDTH0 515 INCHES MINIMUM AND 0 600 INCHES MAXIMUM |
MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 5 WATTS |
MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
MEMORY | CBBL | FEATURES PROVIDEDHIGH PERFORMANCE AND WENABLE AND WRESET AND HERMETICALLY SEALED |
MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
MEMORY | CQZP | INPUT CIRCUIT PATTERN35 INPUT |
MEMORY | CRHL | BIT QUANTITY2048 |
MEMORY | CSWJ | WORD QUANTITY256 |
MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC7 0 VOLTS MAXIMUM POWER SOURCE |
MEMORY | CZER | MEMORY DEVICE TYPERAM |
MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
MEMORY | TTQY | TERMINAL TYPE AND QUANTITY40 PRINTED CIRCUIT |
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