Browse NSN 5962-01-264-0758 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 82009, 82009013A, 82009013B, 82009013X, 82HS641 B3A listed under NSN 5962-01-264-0758 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Dla Land And Maritime, Philips Semiconductors Ltd, Advanced Micro Devices Inc. If you’d like a quick quote for NSN 5962-01-264-0758, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-264-0758 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012640758 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Philips Semiconductors Ltd |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 82009 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82009013A | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82009013B | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82009013X | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82HS641 B3A | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| AM27S49 B3A | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM27S49 B3C | advanced micro devices inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012640758
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 460 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 460 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 100 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 04 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDHERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMTRANSISTOR-TRANSISTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN14 INPUT |
| MEMORY | CRHL | BIT QUANTITY65536 |
| MEMORY | CSWJ | WORD QUANTITY8192 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-4 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC190 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 3 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTIC10 00 INPUT PICOFARADS MAXIMUM AND 13 00 OUTPUT PICOFARADS MAXIMUM |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC100 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPEPROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 LEADLESS |
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