Browse NSN 5962-01-281-5605 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 616483, 646109-902, M2716, MKB2716T-8, ROM PROM FAMILY 020 listed under NSN 5962-01-281-5605 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Raytheon Company, Intel Corporation, Stmicroelectronics Inc, Dla Land And Maritime. If you’d like a quick quote for NSN 5962-01-281-5605, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-281-5605 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012815605 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Intel Corporation , Raytheon Company , Stmicroelectronics Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 616483 | raytheon company | microcircuit memory | Avl | RFQ |
| 646109-902 | raytheon company | microcircuit memory | Avl | RFQ |
| M2716 | intel corporation | microcircuit memory | Avl | RFQ |
| MKB2716T-8 | stmicroelectronics inc | microcircuit memory | Avl | RFQ |
| ROM PROM FAMILY 020 | dla land and maritime | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012815605
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.130 INCHES MINIMUM AND 1.260 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.475 INCHES MINIMUM AND 0.530 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.160 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND W/ENABLE AND HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 14 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 26.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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