Browse NSN 5962-01-287-3367 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 312A4582P2, IDT7164L70L32B, IDT7164L70LB listed under NSN 5962-01-287-3367 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Bae Systems Controls Inc, Integrated Device Technology Inc. If you’d like a quick quote for NSN 5962-01-287-3367, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-287-3367 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012873367 |
| NCB Code: USA (01) |
| Manufacturers: Bae Systems Controls Inc , Integrated Device Technology Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 312A4582P2 | bae systems controls inc | microcircuit memory | Avl | RFQ |
| IDT7164L70L32B | integrated device technology inc | microcircuit memory | Avl | RFQ |
| IDT7164L70LB | integrated device technology inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012873367
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH0 540 INCHES MINIMUM AND 0 560 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 442 INCHES MINIMUM AND 0 458 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 060 INCHES MINIMUM AND 0 120 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND LOW POWER AND HIGH SPEED |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONLEADLESS FLAT PACK |
| MEMORY | CQWX | OUTPUT LOGIC FORMCOMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN23 INPUT |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORC-12 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 30 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY32 LEADLESS |
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