Browse NSN 5962-01-293-1169 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 333293-1, 703676-1, AM27128-20ADC listed under NSN 5962-01-293-1169 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Bae Systems Information And Electronic Systems Integration Inc, Advanced Micro Devices Inc. If you’d like a quick quote for NSN 5962-01-293-1169, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-293-1169 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012931169 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Bae Systems Information And Electronic Systems Integration Inc |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 333293-1 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| 703676-1 | bae systems information and electronic systems integration inc | microcircuit memory | Avl | RFQ |
| AM27128-20ADC | advanced micro devices inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012931169
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 440 INCHES MINIMUM AND 1 500 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 510 INCHES MINIMUM AND 0 550 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 135 INCHES MINIMUM AND 0 165 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE0 070 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0125 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDULTRAVIOLET ERASABLE AND PROGRAMMABLE AND ELECTROSTATIC SENSITIVE AND WENABLE |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN19 INPUT |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC22 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME LOW TO HIGH LEVEL OUTPUT AND 200 00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME HIGH TO LOW LEVEL OUTPUT |
| MEMORY | CZER | MEMORY DEVICE TYPEROM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY28 PRINTED CIRCUIT |
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