Browse NSN 5962-01-323-6988 Listing of Microcircuit Memory
It is our pleasure to inform you that part number EDI81256C35QB, IDT71257L35CB listed under NSN 5962-01-323-6988 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by White Electronic Designs Corp, Integrated Device Technology Inc. If you’d like a quick quote for NSN 5962-01-323-6988, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-323-6988 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013236988 |
| NCB Code: USA (01) |
| Manufacturers: Integrated Device Technology Inc , White Electronic Designs Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| EDI81256C35QB | white electronic designs corp | microcircuit memory | Avl | RFQ |
| IDT71257L35CB | integrated device technology inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013236988
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.280 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND MONOLITHIC AND ELECTROSTATIC SENSITIVE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 21 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-9 MIL-M-38510 |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
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