Browse NSN 5962-01-330-5523 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 8511874-757, EDI8832C45CB, IDT71256S45L32B listed under NSN 5962-01-330-5523 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Honeywell International Inc, White Electronic Designs Corp, Integrated Device Technology Inc. If you’d like a quick quote for NSN 5962-01-330-5523, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-330-5523 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013305523 |
| NCB Code: USA (01) |
| Manufacturers: Honeywell International Inc , Integrated Device Technology Inc , White Electronic Designs Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 8511874-757 | honeywell international inc | microcircuit memory | Avl | RFQ |
| EDI8832C45CB | white electronic designs corp | microcircuit memory | Avl | RFQ |
| IDT71256S45L32B | integrated device technology inc | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013305523
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.542 INCHES MINIMUM AND 0.558 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.542 INCHES MINIMUM AND 0.558 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.074 INCHES MINIMUM AND 0.086 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND HIGH SPEED AND STATIC OPERATION |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| CZER | MEMORY DEVICE TYPE | RAM |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 32 LEADLESS |
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