Browse NSN 5962-01-373-9119 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 979738-113, 979738 113, DM54S287J 883, MMI6301-J, PR979738-113 listed under NSN 5962-01-373-9119 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Raytheon Technical Services Company, Raytheon Company, National Semiconductor Corp, Advanced Micro Devices Inc. If you’d like a quick quote for NSN 5962-01-373-9119, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-373-9119 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013739119 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , National Semiconductor Corp , Raytheon Company , Raytheon Technical Services Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 979738-113 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| 979738 113 | raytheon company | microcircuit memory | Avl | RFQ |
| DM54S287J 883 | national semiconductor corp | microcircuit memory | Avl | RFQ |
| MMI6301-J | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| PR979738-113 | raytheon technical services company | microcircuit memory | Avl | RFQ |
| PR979738 113 | raytheon company | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013739119
| MRC | Criteria | Characteristic |
|---|---|---|
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | DISPLAY CONSO E/I FSCM 49956 |
| CBBL | FEATURES PROVIDED | BIPOLAR AND ELECTRICALLY ALTERABLE AND LOW POWER AND HIGH RELIABILITY AND PROGRAMMED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM OUTPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCY | 1024 BIT BIPOLAR(256X4) ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM APPLIED AND 7.0 VOLTS MAXIMUM APPLIED |
| CZER | MEMORY DEVICE TYPE | EEPROM |
| CZES | HYBRID TECHNOLOGY TYPE | MONOLITHIC |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| ZZZP | PURCHASE DESCRIPTION IDENTIFICATION | 49956-979738-113 |
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