Part Number 585R727H02 with NSN 5962-01-226-3025 by Fujitsu Microelectronics Inc - Get an Instant Quote
Part Number: 585R727H02
Manufacturer: Fujitsu Microelectronics Inc
NSN: 5962-01-226-3025 (5962012263025)
NIIN: 012263025
Item Name : Microcircuit Memory
CAGE Code: 61271
We’re happy to announce that part number 585R727H02 with NSN 5962012263025 is available and in stock. Part number 585R727H02 as Microcircuit Memory manufactured by Fujitsu Microelectronics Inc having CAGE Code 61271. This part falls under FSC 5962 Microcircuits Electronic and NIIN of 585R727H02 is 012263025 .
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The National Stock Number or NATO Stock Number (NSN) is a 13-digit serial number assigned by the Defense Logistics Agency to all items that are procured, stocked, and issued through the federal supply system. For more information on 585R727H02, NSN 5962012263025 or other NSNs, feel free to call us at our toll-free number, +1-714-705-4780, or email us at sales@fulfillmentbyasap.com.
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NSN Information for Part Number 585R727H02 with NSN 5962-01-226-3025, 5962012263025
| NSN | FSC | NIIN | CLS | Hazmat | DEMIL | Cancelled NSN |
|---|---|---|---|---|---|---|
| 5962-01-226-3025 Item Description: Microcircuit Memory | 5962 | 012263025 | 0 | N | B | |
| CIIC | HCC | ESD | PMIC | Criticality | ENAC | |
| U | B | A | 0 | |||
| Part Number | ISC | RNVC | RNCC | HCC | MSDS | SADC |
| 585r727h02 | 5 | 2 | 5 |
Characteristics Data of NSN 5962-01-226-3025, 5962012263025
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | ADAQ | BODY LENGTH1 060 INCHES MAXIMUM |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 130 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0 TO 125 0 DEG CELSIUS |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0 TO 150 0 DEG CELSIUS |
| MEMORY | CBBL | FEATURES PROVIDEDELECTROSTATIC SENSITIVE AND HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CQZP | INPUT CIRCUIT PATTERN17 INPUT |
| MEMORY | CRHL | BIT QUANTITY16384 |
| MEMORY | CSWJ | WORD QUANTITY16384 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510 |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC120 00 MILLIAMPERES MAXIMUM SUPPLY |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-0 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC120 00 NANOSECONDS MAXIMUM DELAY |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | TEST | TEST DATA DOCUMENT96906-MIL-STD-883 STANDARD INCLUDES INDUSTRY OR ASSOCIATION STANDARDS INDIVIDUAL MANUFACTUREER STANDARDS ETC |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT |
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