Browse NSN 5962-01-079-7736 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 1818-1756, 202340-001, 202340-001, 341844-1, 906745 103 listed under NSN 5962-01-079-7736 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Hewlett Packard Co, Intel Corporation, Bae Systems Information And Electronic Systems Integration I, Raytheon Company, Advanced Micro Devices Inc. If you’d like a quick quote for NSN 5962-01-079-7736, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-079-7736 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 010797736 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Bae Systems Information And Electronic Systems Integration I , Dla Land And Maritime , Fairchild Semiconductor Corp , Hewlett Packard Co , Intel Corporation , National Semiconductor Corp , Philips Semiconductors Ltd , Raytheon Company |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1818-1756 | hewlett packard co | microcircuit memory | Avl | RFQ |
| 202340-001 | intel corporation | microcircuit memory | Avl | RFQ |
| 202340-001 | bae systems information and electronic systems integration i | microcircuit memory | Avl | RFQ |
| 341844-1 | raytheon company | microcircuit memory | Avl | RFQ |
| 906745 103 | raytheon company | microcircuit memory | Avl | RFQ |
| 9102DDC | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 9102DM B | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| AM9102DM | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| DMS 84006B | dla land and maritime | microcircuit memory | Avl | RFQ |
| HL31687 | fairchild semiconductor corp | microcircuit memory | Avl | RFQ |
| MD2102A-6 | intel corporation | microcircuit memory | Avl | RFQ |
| MD2102A 6B | intel corporation | microcircuit memory | Avl | RFQ |
| MM2102AJ6L | national semiconductor corp | microcircuit memory | Avl | RFQ |
| MM2102J 883B | national semiconductor corp | microcircuit memory | Avl | RFQ |
| RBX2102F | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962010797736
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/DECODED OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 81413-202340 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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