Browse NSN 5962-01-108-4110 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 351-7769-280, 5301-1J 7769-280, AM27S11DM 7769 280, HM1-7611-2 7769-280, SN54S287J 7769-280 listed under NSN 5962-01-108-4110 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Rockwell Collins Inc, Mmi Amd, Advanced Micro Devices Inc, Intersil Inc, Texas Instruments Incorporated. If you’d like a quick quote for NSN 5962-01-108-4110, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-108-4110 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011084110 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Intersil Inc , Mmi Amd , Rockwell Collins Inc , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 351-7769-280 | rockwell collins inc | microcircuit memory | Avl | RFQ |
| 5301-1J 7769-280 | mmi amd | microcircuit memory | Avl | RFQ |
| AM27S11DM 7769 280 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| HM1-7611-2 7769-280 | intersil inc | microcircuit memory | Avl | RFQ |
| SN54S287J 7769-280 | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011084110
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 512.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | MO-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| CZZZ | MEMORY CAPACITY | UNKNOWN |
| TEST | TEST DATA DOCUMENT | 13499-351-7769 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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