Browse NSN 5962-01-108-7866 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 351-7769-150, 5301-1J 7769-150, AM27S11DM 7769-150, HM1 7611 2 7769 150, SN54S287J 7769-150 listed under NSN 5962-01-108-7866 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Rockwell Collins Inc, Mmi Amd, Advanced Micro Devices Inc, Intersil Inc, Texas Instruments Incorporated. If you’d like a quick quote for NSN 5962-01-108-7866, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-108-7866 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011087866 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Intersil Inc , Mmi Amd , Rockwell Collins Inc , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 351-7769-150 | rockwell collins inc | microcircuit memory | Avl | RFQ |
| 5301-1J 7769-150 | mmi amd | microcircuit memory | Avl | RFQ |
| AM27S11DM 7769-150 | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| HM1 7611 2 7769 150 | intersil inc | microcircuit memory | Avl | RFQ |
| SN54S287J 7769-150 | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011087866
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.155 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND PROGRAMMABLE AND SCHOTTKY AND W/DECODED OUTPUT AND 3-STATE OUTPUT |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.5 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 13499-351-7769 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRA |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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