Browse NSN 5962-01-127-2146 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 725000-589, AM9050EDLB, DMSCASE84 065B, SMC4050-2JR listed under NSN 5962-01-127-2146 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Raytheon Company, Advanced Micro Devices Inc, Dla Land And Maritime, Texas Instruments Incorporated. If you’d like a quick quote for NSN 5962-01-127-2146, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-127-2146 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 011272146 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Raytheon Company , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 725000-589 | raytheon company | microcircuit memory | Avl | RFQ |
| AM9050EDLB | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| DMSCASE84 065B | dla land and maritime | microcircuit memory | Avl | RFQ |
| SMC4050-2JR | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962011272146
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.910 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.165 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 85.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | PO OK-398 FSCM 05869 |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 20.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | ROM |
| TEST | TEST DATA DOCUMENT | 05869-725000 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWI |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
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