Browse NSN 5962-01-247-1386 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 19-12661-00, 3101DM-B, 54S189 BEA, 571 71 0001, 5962-7801502BEA listed under NSN 5962-01-247-1386 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Compaq Federal Llc, Advanced Micro Devices Inc, Philips Semiconductors Ltd, Hamilton Sundstrand Corporation, Dla Land And Maritime. If you’d like a quick quote for NSN 5962-01-247-1386, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
Alternative NSN: 5962-01-247-1386 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 012471386 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc , Compaq Federal Llc , Dla Land And Maritime , Exelis Inc , Hamilton Sundstrand Corporation , Lansdale Semiconductor Inc , Mmi Amd , Philips Semiconductors Ltd , Raytheon Company , Sri International , Texas Instruments Incorporated |
Characteristics Data of NSN 5962012471386
MRC | Criteria | Characteristic |
---|---|---|
ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | MONOLITHIC AND SCHOTTKY AND W/ENABLE |
CQSJ | INCLOSURE MATERIAL | CERAMIC AND GLASS |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
CQZP | INPUT CIRCUIT PATTERN | 10 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
CZEQ | TIME RATING PER CHACTERISTIC | 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
CZER | MEMORY DEVICE TYPE | RAM |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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