Browse NSN 5962-01-262-2964 Listing of Microcircuit Memory
It is our pleasure to inform you that part number AM27S19A BEA, 5962-86703, 5962-8670302EB, ROM PROM HEAD 293, 5962-8670302EA listed under NSN 5962-01-262-2964 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Advanced Micro Devices Inc, Dla Land And Maritime, Philips Semiconductors Ltd, Rockwell Collins Inc, Texas Instruments Incorporated. If you’d like a quick quote for NSN 5962-01-262-2964, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-262-2964 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012622964 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Dla Land And Maritime , Philips Semiconductors Ltd , Rockwell Collins Inc , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| AM27S19A BEA | advanced micro devices inc | microcircuit memory | Avl | RFQ |
| 5962-86703 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8670302EB | dla land and maritime | microcircuit memory | Avl | RFQ |
| ROM PROM HEAD 293 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8670302EA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 5962-8670302EX | dla land and maritime | microcircuit memory | Avl | RFQ |
| 82S123A BEA | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
| 258 0009 010 | rockwell collins inc | microcircuit memory | Avl | RFQ |
| TBP18S03N | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012622964
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.840 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.310 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.185 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 633.0 MILLIWATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | MONOLITHIC AND PROGRAMMABLE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 6 INPUT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZER | MEMORY DEVICE TYPE | PROM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
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