Browse NSN 5962-01-266-1459 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 85152, 8515203XA, 8515203XB, 8515203XX, M41256HN-12 listed under NSN 5962-01-266-1459 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Dla Land And Maritime, A T And T Technologies Inc, Fujitsu Microelectronics Inc, Micron Technology Inc, Texas Instruments Incorporated. If you’d like a quick quote for NSN 5962-01-266-1459, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-266-1459 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012661459 |
| NCB Code: USA (01) |
| Manufacturers: A T And T Technologies Inc , Dla Land And Maritime , Fujitsu Microelectronics Inc , Micron Technology Inc , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 85152 | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8515203XA | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8515203XB | dla land and maritime | microcircuit memory | Avl | RFQ |
| 8515203XX | dla land and maritime | microcircuit memory | Avl | RFQ |
| M41256HN-12 | a t and t technologies inc | microcircuit memory | Avl | RFQ |
| MB81257-12 | fujitsu microelectronics inc | microcircuit memory | Avl | RFQ |
| MT1259EC 12883C | micron technology inc | microcircuit memory | Avl | RFQ |
| SMJ4256-12FVS | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962012661459
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 0.505 INCHES MAXIMUM |
| ADAT | BODY WIDTH | 0.305 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.100 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND DYNAMIC AND W/ENABLE AND W/STROBE |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | LEADLESS FLAT PACK |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 13 INPUT |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES NOMINAL OUTPUT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM TOTAL SUPPLY |
| CZEQ | TIME RATING PER CHACTERISTIC | 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 120.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 18 LEADLESS |
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