Browse NSN 5962-01-304-4400 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 28105283, EDH8832C 70KMHR, ES5447-02, IDT71256S85DB, SMJ68CE256-55M listed under NSN 5962-01-304-4400 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Global Associates Ltd, White Electronic Designs Corp, Drs Sustainment Systems Inc, Integrated Device Technology Inc, Texas Instruments Incorporated. If you’d like a quick quote for NSN 5962-01-304-4400, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-304-4400 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013044400 |
| NCB Code: USA (01) |
| Manufacturers: Drs Sustainment Systems Inc , Global Associates Ltd , Integrated Device Technology Inc , Texas Instruments Incorporated , White Electronic Designs Corp |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 28105283 | global associates ltd | microcircuit memory | Avl | RFQ |
| EDH8832C 70KMHR | white electronic designs corp | microcircuit memory | Avl | RFQ |
| ES5447-02 | drs sustainment systems inc | microcircuit memory | Avl | RFQ |
| IDT71256S85DB | integrated device technology inc | microcircuit memory | Avl | RFQ |
| SMJ68CE256-55M | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013044400
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.400 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.594 INCHES MAXIMUM |
| ADAU | BODY HEIGHT | 0.280 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND STATIC OPERATION AND HIGH SPEED |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 26 INPUT |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TTQY | TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
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