Browse NSN 5962-01-331-7106 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 5962 85155, 5962-8515509BRA, 5962-8515509BRB, 5962 8515509BRX, 5962 8515509RA listed under NSN 5962-01-331-7106 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Dla Land And Maritime, Bae Systems, Advanced Micro Devices Inc, Mmi Amd, Philips Semiconductors Ltd. If you’d like a quick quote for NSN 5962-01-331-7106, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
Alternative NSN: 5962-01-331-7106 |
Item Name: Microcircuit Memory |
Federal Supply Class (FSC): 5962 Microcircuits Electronic |
NIIN: 013317106 |
NCB Code: USA (01) |
Manufacturers: Advanced Micro Devices Inc , Bae Systems , Dla Land And Maritime , Mmi Amd , Philips Semiconductors Ltd , Texas Instruments Incorporated |
Part No | Manufacturer | Item Name | QTY | RFQ |
---|---|---|---|---|
5962 85155 | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8515509BRA | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8515509BRB | dla land and maritime | microcircuit memory | Avl | RFQ |
5962 8515509BRX | dla land and maritime | microcircuit memory | Avl | RFQ |
5962 8515509RA | dla land and maritime | microcircuit memory | Avl | RFQ |
5962-8515509RB | dla land and maritime | microcircuit memory | Avl | RFQ |
5962 8515509RX | dla land and maritime | microcircuit memory | Avl | RFQ |
PAL-025 | bae systems | microcircuit memory | Avl | RFQ |
PAL16L8DCJ | advanced micro devices inc | microcircuit memory | Avl | RFQ |
PAL16L8DMJ 883B | mmi amd | microcircuit memory | Avl | RFQ |
PLUS16L8 BRA | philips semiconductors ltd | microcircuit memory | Avl | RFQ |
ROM PROM HEAD 200 | dla land and maritime | microcircuit memory | Avl | RFQ |
TIBPAL16L8-15MJB | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013317106
MRC | Criteria | Characteristic |
---|---|---|
ABKW | OVERALL HEIGHT | 0.400 INCHES MAXIMUM |
ADAQ | BODY LENGTH | 1.060 INCHES MAXIMUM |
ADAT | BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
ADAU | BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
AEHX | MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
CBBL | FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL |
CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
CQWX | OUTPUT LOGIC FORM | BIPOLAR METAL-OXIDE SEMICONDUCTOR |
CQZP | INPUT CIRCUIT PATTERN | 16 INPUT |
CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-8 MIL-M-38510 |
CTQX | CURRENT RATING PER CHARACTERISTIC | 12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE |
CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS NOMINAL POWER SOURCE |
TEST | TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
CQSJ | INCLOSURE MATERIAL | CERAMIC |
CZER | MEMORY DEVICE TYPE | PAL |
TTQY | TERMINAL TYPE AND QUANTITY | 20 PRINTED CIRCUIT |
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