Browse NSN 5962-01-331-7106 Listing of Microcircuit Memory

It is our pleasure to inform you that part number 5962 85155, 5962-8515509BRA, 5962-8515509BRB, 5962 8515509BRX, 5962 8515509RA listed under NSN 5962-01-331-7106 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Dla Land And Maritime, Bae Systems, Advanced Micro Devices Inc, Mmi Amd, Philips Semiconductors Ltd. If you’d like a quick quote for NSN 5962-01-331-7106, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!


Alternative NSN: 5962-01-331-7106
Item Name: Microcircuit Memory
Federal Supply Class (FSC): 5962 Microcircuits Electronic
NIIN: 013317106
NCB Code: USA (01)
Manufacturers: Advanced Micro Devices Inc , Bae Systems , Dla Land And Maritime , Mmi Amd , Philips Semiconductors Ltd , Texas Instruments Incorporated
Part No Manufacturer Item Name QTY RFQ
5962 85155 dla land and maritime microcircuit memory Avl RFQ
5962-8515509BRA dla land and maritime microcircuit memory Avl RFQ
5962-8515509BRB dla land and maritime microcircuit memory Avl RFQ
5962 8515509BRX dla land and maritime microcircuit memory Avl RFQ
5962 8515509RA dla land and maritime microcircuit memory Avl RFQ
5962-8515509RB dla land and maritime microcircuit memory Avl RFQ
5962 8515509RX dla land and maritime microcircuit memory Avl RFQ
PAL-025 bae systems microcircuit memory Avl RFQ
PAL16L8DCJ advanced micro devices inc microcircuit memory Avl RFQ
PAL16L8DMJ 883B mmi amd microcircuit memory Avl RFQ
PLUS16L8 BRA philips semiconductors ltd microcircuit memory Avl RFQ
ROM PROM HEAD 200 dla land and maritime microcircuit memory Avl RFQ
TIBPAL16L8-15MJB texas instruments incorporated microcircuit memory Avl RFQ

Characteristics Data of NSN 5962013317106

MRCCriteriaCharacteristic
ABKWOVERALL HEIGHT0.400 INCHES MAXIMUM
ADAQBODY LENGTH1.060 INCHES MAXIMUM
ADATBODY WIDTH0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
ADAUBODY HEIGHT0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
AEHXMAXIMUM POWER DISSIPATION RATING1.2 WATTS
AFGAOPERATING TEMP RANGE-55.0/+125.0 DEG CELSIUS
AFJQSTORAGE TEMP RANGE-65.0/+150.0 DEG CELSIUS
CBBLFEATURES PROVIDEDBIPOLAR AND PROGRAMMABLE AND MONOLITHIC AND BIDIRECTIONAL
CQSZINCLOSURE CONFIGURATIONDUAL-IN-LINE
CQWXOUTPUT LOGIC FORMBIPOLAR METAL-OXIDE SEMICONDUCTOR
CQZPINPUT CIRCUIT PATTERN16 INPUT
CTFTCASE OUTLINE SOURCE AND DESIGNATORD-8 MIL-M-38510
CTQXCURRENT RATING PER CHARACTERISTIC12.00 MILLIAMPERES AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE NOT APPLICABLE
CWSGTERMINAL SURFACE TREATMENTSOLDER
CZENVOLTAGE RATING AND TYPE PER CHARACTERISTIC5.0 VOLTS NOMINAL POWER SOURCE
TESTTEST DATA DOCUMENT96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.).
CQSJINCLOSURE MATERIALCERAMIC
CZERMEMORY DEVICE TYPEPAL
TTQYTERMINAL TYPE AND QUANTITY20 PRINTED CIRCUIT

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