Browse NSN 5962-01-215-0975 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 1818-1981, 1818-3286, 2611438-1, 314124P1, 351-5630-010 listed under NSN 5962-01-215-0975 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Hewlett Packard Co, Alliant Techsystems Operations Llc, Bae Systems Information And Electronic Systems Integration Inc, Rockwell Collins Inc, Boeing Company The. If you’d like a quick quote for NSN 5962-01-215-0975, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-215-0975 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 012150975 |
| NCB Code: USA (01) |
| Manufacturers: Advanced Micro Devices Inc , Alliant Techsystems Operations Llc , Bae Systems Information And Electronic Systems Integration Inc , Boeing Company The , Dla Land And Maritime , Harris Corporation , Hewlett Packard Co , Raytheon Company , Rockwell Collins Inc , Texas Instruments Incorporated , Toshiba Corp |
Characteristics Data of NSN 5962012150975
| MRC | Criteria | Characteristic |
|---|---|---|
| ADAQ | BODY LENGTH | 1.250 INCHES NOMINAL |
| ADAT | BODY WIDTH | 0.500 INCHES NOMINAL |
| ADAU | BODY HEIGHT | 0.210 INCHES MAXIMUM |
| AEHX | MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| AFGA | OPERATING TEMP RANGE | -55.0/+125.0 DEG CELSIUS |
| AFJQ | STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| AGAV | END ITEM IDENTIFICATION | 5820-01-160-9360 CONTROL,RADIO S; AIRCRAFT, HERCULES C-130; AIRCRAFT, (AC-130H, MC-130H, EC-130E, HC-130); BALLISTIC MISSILE EARLY WARNING SYS:(BMEWS); SUPPORT EQUIPMENT, B-1 AIRCRAFT; TORPEDO SYSTEMS, MK 50; SUPPORT EQUI |
| CBBL | FEATURES PROVIDED | HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND W/ENABLE AND BIDIRECTIONAL |
| CQSJ | INCLOSURE MATERIAL | CERAMIC |
| CQSZ | INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| CQWX | OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| CQZP | INPUT CIRCUIT PATTERN | 22 INPUT |
| CRTL | CRITICALITY CODE JUSTIFICATION | FEAT |
| CTFT | CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| CTQX | CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES NOMINAL SUPPLY |
| CWSG | TERMINAL SURFACE TREATMENT | SOLDER |
| CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MAXIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| CZEQ | TIME RATING PER CHACTERISTIC | 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 200.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| CZER | MEMORY DEVICE TYPE | RAM |
| FEAT | SPECIAL FEATURES | WEAPON SYSTEM ESSENTIAL |
| TEST | TEST DATA DOCUMENT | 14933-81039 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWIN |
| TTQY | TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
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