Browse NSN 5962-01-341-2450 Listing of Microcircuit Memory
It is our pleasure to inform you that part number 1818-3307, 8515203EA, MT1259 12, SMJ4256-12JDS, TMS4256-12NL listed under NSN 5962-01-341-2450 is now available and ready to ship from Fulfillment By ASAP. This part described as a Microcircuit Memory manufactured by Hewlett Packard Co, Dla Land And Maritime, Micron Technology Inc, Texas Instruments Incorporated. If you’d like a quick quote for NSN 5962-01-341-2450, please fill out the form from below. Are you looking to have it delivered today or tomorrow? We can help! Simply complete the Request For Quote (RFQ) form given below to get started, and we will get back to you within 15 minutes!
| Alternative NSN: 5962-01-341-2450 |
| Item Name: Microcircuit Memory |
| Federal Supply Class (FSC): 5962 Microcircuits Electronic |
| NIIN: 013412450 |
| NCB Code: USA (01) |
| Manufacturers: Dla Land And Maritime , Hewlett Packard Co , Micron Technology Inc , Texas Instruments Incorporated |
| Part No | Manufacturer | Item Name | QTY | RFQ |
|---|---|---|---|---|
| 1818-3307 | hewlett packard co | microcircuit memory | Avl | RFQ |
| 8515203EA | dla land and maritime | microcircuit memory | Avl | RFQ |
| MT1259 12 | micron technology inc | microcircuit memory | Avl | RFQ |
| SMJ4256-12JDS | texas instruments incorporated | microcircuit memory | Avl | RFQ |
| TMS4256-12NL | texas instruments incorporated | microcircuit memory | Avl | RFQ |
Characteristics Data of NSN 5962013412450
| MRC | Criteria | Characteristic |
|---|---|---|
| MEMORY | CQZP | INPUT CIRCUIT PATTERN13 INPUT |
| MEMORY | CRHL | BIT QUANTITY262144 |
| MEMORY | CZER | MEMORY DEVICE TYPERAM |
| MEMORY | ABKW | OVERALL HEIGHT0 400 INCHES MAXIMUM |
| MEMORY | ADAQ | BODY LENGTH0 840 INCHES MAXIMUM |
| MEMORY | AEHX | MAXIMUM POWER DISSIPATION RATING1 0 WATTS |
| MEMORY | CBBL | FEATURES PROVIDEDDYNAMIC AND MONOLITHIC AND WCLOCK AND WBUFFERED OUTPUT |
| MEMORY | CTQX | CURRENT RATING PER CHARACTERISTIC90 00 MILLIAMPERES REVERSE CURRENT DC ABSOLUTE |
| MEMORY | CXCY | PART NAME ASSIGNED BY CONTROLLING AGENCYDYNAMIC RANDOM ACCESS MEMORY |
| MEMORY | CZEN | VOLTAGE RATING AND TYPE PER CHARACTERISTIC-1 5 VOLTS MINIMUM POWER SOURCE AND 7 0 VOLTS MAXIMUM POWER SOURCE |
| MEMORY | ZZZK | SPECIFICATIONSTANDARD DATA81349-MIL-M-38510246 GOVERNMENT SPECIFICATION |
| MEMORY | CZEQ | TIME RATING PER CHACTERISTIC60 00 NANOSECONDS MINIMUM ACCESS AND 120 00 NANOSECONDS MAXIMUM ACCESS |
| MEMORY | TEST | TEST DATA DOCUMENT81349-MIL-M-38510 SPECIFICATION INCLUDES ENGINEERING TYPE BULLETINS BROCHURESETC THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT EXCLUDES COMMERCIAL CATALOGS INDUSTRY DIRECTORIES AND SIMILAR TRADE PUBLICATIONS REFLECTI |
| MEMORY | ADAT | BODY WIDTH0 220 INCHES MINIMUM AND 0 310 INCHES MAXIMUM |
| MEMORY | ADAU | BODY HEIGHT0 140 INCHES MINIMUM AND 0 185 INCHES MAXIMUM |
| MEMORY | AFJQ | STORAGE TEMP RANGE-65 0150 0 DEG CELSIUS |
| MEMORY | CQSZ | INCLOSURE CONFIGURATIONDUAL-IN-LINE |
| MEMORY | CSWJ | WORD QUANTITY262144 |
| MEMORY | CTFT | CASE OUTLINE SOURCE AND DESIGNATORD-2 MIL-M-38510 |
| MEMORY | CWSG | TERMINAL SURFACE TREATMENTSOLDER |
| MEMORY | AFGA | OPERATING TEMP RANGE-55 0110 0 DEG CELSIUS |
| MEMORY | CQSJ | INCLOSURE MATERIALCERAMIC |
| MEMORY | CQWX | OUTPUT LOGIC FORMN-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY | CZEP | CAPITANCE RATING PER CHARACTERISTICERR-060 MAXIMUM AND ERR-060 MAXIMUM |
| MEMORY | TTQY | TERMINAL TYPE AND QUANTITY16 PRINTED CIRCUIT |
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